jiangsu changjiang electronics technology co., ltd sot-23-3l plastic-encapsulate mosfets CJK3401A p-chan nel enhanceme n t mode field ef fect t r ansistor fea ture z high dense cell design for extremely low r ds(on) z exceptional on-resistance and maximum marking maximum ra tings ( t a =25 unless otherwise noted) parameter symbol value unit drain-source voltage v ds -30 v gate-source voltage v gs 12 v conti nuo us dr ain c u rrent i d -4.2 a power dissipation p d 450 mw thermal resistance from junction to ambient ( t<5s )r ja 313 /w junctio n t e mperature t j 150 storage temperature t stg -55~+150 g d s a,dec,2010 www.cj-elec.com 1 a - 2 , apr ,2015 v (br)dss r ds(on) max i d -30v 60 m @ -10v ? -4.2a? 70 m @-4.5v 85 m @-2.5v application z load switch for portable devices z dc/dc converter dc current capability z equivalent circuit solid dot = green molding compound device, if none,the normal device. so t -23-3l 1. gate 2. source 3. drain d
parameter symbol test conditi on min typ max unit off characteristics drain-source breakd o wn voltage v (br)dss v gs = 0v, i d =-250a -30 v zero gate voltage drain curre nt i dss v ds =-24v,v gs = 0v -1 a gate-source leakage current i gss v gs =12v, v ds = 0v 100 na on characteristics v gs =-10v, i d =-4.2a 60 m ? v gs =-4.5v, i d =-4a 70 m ? drain-source on-resistan ce (note 1) r ds(on) v gs =-2.5v,i d =-1a 85 m? forward tranc o nductance (note 1) g fs v ds =-5v, i d =-5a 7 s gate threshold voltage v gs(th) v ds =v gs , i d =-250a -0.7 -1.3 v dynamic cha r acteristics (note 2) input capacitance c iss 1050 pf output capacitance c oss 127 pf reverse transfer capacitance c rss v ds =-15v,v gs =0v,f =1mhz 85 pf switching cha r acteristics (note 2) turn-on delay ti me t d(on) 6.5 ns turn-on rise time t r 3.5 ns turn-off delay time t d(off) 40 ns turn-off fall time t f v gs =-10v,v ds =-15v, r l =3.6 ?,r gen =6 ? 13 ns drain-source d iode characteristics and maximum ratings diode forward voltag e (note 1 ) v sd i s =-1a,v gs =0v -1 v note : 1. pulse test : pulse wi dth 300s, duty cycle 2%. 2. these parameters have no way to verify. mosfet electrical characteristics t =25 unless otherwise specified a www.cj-elec.com 2 a-2,apr,2015
-0.0 -0.4 -0.8 -1.2 -1.6 -2 .0 -0 .1 -1 -5 -0 -1 -2 -3 -4 -0 -4 -8 -12 -16 -20 -1 -2 -3 -4 -5 20 30 40 50 60 70 80 -0 -1 -2 -3 -4 -5 -6 -7 -8 -9 -10 0 100 200 300 -0.0 -0.5 -1.0 -1 .5 -2.0 -2.5 -3.0 -3.5 -4.0 -0 -2 -4 -6 -8 -10 -12 -14 -16 -18 25 50 75 100 125 -0.4 -0.6 -0.8 -1.0 -1 .2 pulsed t a =100 v sd i s ? ? t a =25 source current i s (a) source to drain voltage v sd (v) v gs =-3v,-4v,-5v v gs =-2.5v v gs =-2v output c haracteristics v gs =-1.5v drain current i d (a) drain to source voltage v ds (v) t a =25 pulsed v gs =-2.5v v gs =-4.5v v gs =-10v t a =25 pulsed on-resistance r ds(on) (m ? ) drain current i d (a) i d ?? r ds(on) pulsed t a =100 t a =25 on-resistance r ds(on) (m ? ) gate to source voltage v gs (v) v gs ?? r ds(on) i d =-4.2a v ds =-3v pulsed drain current i d (a) gate to source voltage v gs (v) t r an sf er c h aract eristics t a =100 t a =25 i d =-250ua threshold vol t age threshold voltage v th (v) junction temperature t j ( ) 7 \ s l f d o & k d u d f w h u l v w l f v
3 a-2,apr,2015
a-2,apr,2015 min. max. min. max. a 1.050 1.250 0.041 0.049 a1 0.000 0.100 0.000 0.004 a2 1.050 1.150 0.041 0.045 b 0.300 0.500 0.012 0.020 c 0.100 0.200 0.004 0.008 d 2.820 3.020 0.111 0.119 e1 1.500 1.700 0.059 0.067 e 2.650 2.950 0.104 0.116 e e1 1.800 2.000 0.071 0.079 l 0.300 0.600 0.012 0.024 080 8 symbol dimensions in millimeters dimensions in inches 0.950(bsc) 0.037(bsc)
a-2,apr,2015
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